发明名称 Multi-level integrated photonic devices
摘要 A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
申请公布号 US8306087(B2) 申请公布日期 2012.11.06
申请号 US20090641053 申请日期 2009.12.17
申请人 BEHFAR ALEX A.;GREEN MALCOLM R.;SCHREMER ALFRED T.;BINOPTICS CORPORATION 发明人 BEHFAR ALEX A.;GREEN MALCOLM R.;SCHREMER ALFRED T.
分类号 H01S5/00;G02B6/12;G02B6/122;G02B6/13;G02F1/017;H01S5/026;H01S5/028;H01S5/0683;H01S5/10;H01S5/22;H01S5/343 主分类号 H01S5/00
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