发明名称 |
Abrasive composition and method for manufacturing semiconductor integrated circuit device |
摘要 |
The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size×the content) is in a range of from 10 to 40; and tetramethylammonium ion. |
申请公布号 |
US8304346(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US201113101560 |
申请日期 |
2011.05.05 |
申请人 |
YOSHIDA IORI;KAMIYA HIROYUKI;ASAHI GLASS COMPANY, LIMITED |
发明人 |
YOSHIDA IORI;KAMIYA HIROYUKI |
分类号 |
H01L21/304;C09K3/14;C09K13/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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