发明名称 |
Memory device and method for estimating characteristics of multi-bit programming |
摘要 |
Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. |
申请公布号 |
US8305818(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US201113303353 |
申请日期 |
2011.11.23 |
申请人 |
CHO KYOUNG LAE;SONG SEUNG-HWAN;PARK YOON DONG;KONG JUN JIN;KIM JAE-HONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KYOUNG LAE;SONG SEUNG-HWAN;PARK YOON DONG;KONG JUN JIN;KIM JAE-HONG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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