发明名称 High-performance memory interface circuit architecture
摘要 A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
申请公布号 US8305121(B1) 申请公布日期 2012.11.06
申请号 US201113168499 申请日期 2011.06.24
申请人 HUANG JOSEPH;SUNG CHIAKANG;PAN PHILIP;CHONG YAN;LEE ANDY L.;JOHNSON BRIAN D.;ALTERA CORPORATION 发明人 HUANG JOSEPH;SUNG CHIAKANG;PAN PHILIP;CHONG YAN;LEE ANDY L.;JOHNSON BRIAN D.
分类号 H03L7/00 主分类号 H03L7/00
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