发明名称 |
ITO film treated by nitrogen plasma and the organic luminescent device using the same |
摘要 |
Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic elect roluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.
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申请公布号 |
US8304983(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20090588692 |
申请日期 |
2009.10.23 |
申请人 |
SON SE HWAN;KANG MIN SOO;JEON SANG YOUNG;KIM JONG GEOL;LG CHEM, LTD. |
发明人 |
SON SE HWAN;KANG MIN SOO;JEON SANG YOUNG;KIM JONG GEOL |
分类号 |
H01L51/10;H05B33/26;H01B1/08;H01L29/12;H01L29/201;H01L51/00;H01L51/44;H01L51/50;H01L51/52;H05B33/28 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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