发明名称 |
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
摘要 |
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer. |
申请公布号 |
US8304790(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20060635613 |
申请日期 |
2006.12.08 |
申请人 |
NAKAMURA SHUJI;NAGAHAMA SHINICHI;IWASA NARUHITO;NICHIA CORPORATION |
发明人 |
NAKAMURA SHUJI;NAGAHAMA SHINICHI;IWASA NARUHITO |
分类号 |
H01L33/00;H01L33/02;H01L33/06;H01L33/32;H01S5/20;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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