发明名称 |
Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device |
摘要 |
A vapor phase deposition apparatus 100 for forming a thin film comprising a chamber 1060, a piping unit 120 for supplying a source material of the thin film into the chamber 1060 in a gaseous condition, a vaporizer 202 for vaporizing the source material in a source material container 112 and supplying the vaporized gas in the piping unit 120 and a temperature control unit 180, is presented. The temperature control unit 180 comprises: a first temperature control unit 174, which is composed of a heater controller unit 172 and a tape heater 170 and is capable of controlling the temperature of the first piping 116 in the piping unit 120 that is directly connected to the chamber 1060; a second temperature control unit 176, which is composed of a heater controller unit 168 and a tape heater 166 and is capable of controlling the temperature of the second piping 114 that is connected to the vaporizer; and a third temperature control unit 178, which is composed of a heater controller unit 167 and a thermostatic chamber 153 and is capable of controlling the temperature of the valve 159. |
申请公布号 |
US8304021(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20090561836 |
申请日期 |
2009.09.17 |
申请人 |
YAMAMOTO TOMOE;IINO TOMOHISA;RENESAS ELECTRONICS CORPORATION |
发明人 |
YAMAMOTO TOMOE;IINO TOMOHISA |
分类号 |
C23C16/16;C23C16/455;C23C16/00;C23C16/18;C23C16/30;C23C16/44;C23C16/448;C23C16/52;C23F1/00;H01L21/00;H01L21/31;H01L21/36;H01L21/8242;H01L27/108;H01L29/78 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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