发明名称 Differential sense amplifier without dedicated precharge transistors
摘要 <p>PURPOSE: A differential sense amplifier without exclusive precharge transistors is provided to minimize the area of sense amplifiers by using semiconductor-on-insulator transistors. CONSTITUTION: A first CMOS inverter and a second CMOS inverter include pull-up transistors(M21,M22) and pull-down transistors(M31,M32). The pull-up transistor and the pull-down transistor of each CMOS inverter have a common drain. A sense amplifier includes a pair of precharge transistors connected to a first bit line and a second bit line. The precharge transistors are composed of the pull-up transistors or the pull-down transistors.</p>
申请公布号 KR20120121365(A) 申请公布日期 2012.11.05
申请号 KR20120043421 申请日期 2012.04.25
申请人 发明人
分类号 G11C7/06;H03F3/45 主分类号 G11C7/06
代理机构 代理人
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