发明名称 Substrate having a charged zone in an insulating buried layer
摘要 Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.
申请公布号 KR101196791(B1) 申请公布日期 2012.11.05
申请号 KR20107017903 申请日期 2008.03.13
申请人 发明人
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
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