| 摘要 |
<p>PURPOSE: A semiconductor device and an operating method thereof are provided to improve the reliability of the semiconductor device by determining whether the selected memory cells are programmed by an amount of electrons injected to a charge storage layer. CONSTITUTION: A memory cell is composed of a tunnel insulation layer, a charge storage layer, a dielectric layer, and a control gate which are successively laminated on a semiconductor substrate. A program voltage(Vpgm) is applied to a control gate and a memory cell is programmed by applying a detrap voltage to the well. Electrons trapped in the tunnel insulation layer are removed by reducing the potential of the control gate than the detrap voltage when the detrap voltage is applied to the well before the memory cell is verified. [Reference numerals] (AA) Program; (BB) D trap; (CC) Verification</p> |
