发明名称 |
flexible organic memory device and method of fabricating the same |
摘要 |
<p>PURPOSE: A flexible organic memory device and a manufacturing method thereof are provided to have flexibility by forming a whole configuration with an organic compound. CONSTITUTION: A charge trapping layer(130) is arranged on a blocking organic insulating layer. A tunneling organic insulating layer(135) is formed on the charge trapping layer. An organic semiconductor layer(140) is formed on the tunneling organic insulating layer. A source electrode(145) is arranged on one side of a control gate electrode. A drain electrode(150) is arranged on the other side of the control gate electrode.</p> |
申请公布号 |
KR20120121042(A) |
申请公布日期 |
2012.11.05 |
申请号 |
KR20110038769 |
申请日期 |
2011.04.26 |
申请人 |
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发明人 |
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分类号 |
H01L27/115;H01L21/786;H01L21/8247;H01L27/12 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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