发明名称 flexible organic memory device and method of fabricating the same
摘要 <p>PURPOSE: A flexible organic memory device and a manufacturing method thereof are provided to have flexibility by forming a whole configuration with an organic compound. CONSTITUTION: A charge trapping layer(130) is arranged on a blocking organic insulating layer. A tunneling organic insulating layer(135) is formed on the charge trapping layer. An organic semiconductor layer(140) is formed on the tunneling organic insulating layer. A source electrode(145) is arranged on one side of a control gate electrode. A drain electrode(150) is arranged on the other side of the control gate electrode.</p>
申请公布号 KR20120121042(A) 申请公布日期 2012.11.05
申请号 KR20110038769 申请日期 2011.04.26
申请人 发明人
分类号 H01L27/115;H01L21/786;H01L21/8247;H01L27/12 主分类号 H01L27/115
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