| 摘要 |
PURPOSE: A manufacturing method of nano silicon carbide is provided to obtain the nano silicon carbide by using waste silicon fine powder generated from a metal silicon lump pulverizing/classifying process. CONSTITUTION: A manufacturing method of nano silicon carbide includes the following steps: silicon fine powder and carbon source are mixed and plasticized to synthesize micro silicon carbide; and the micro silicon carbide is thermal-plasma treated to obtain nano silicon carbide. The silicon fine powder is waste fine powder which is generated from a metal silicon lump pulverizing/classifying process, and the diameter of the waste fine powder is less than or equal to 100um. The carbon source is one or more solid carbon source which is selected from a group including carbon black and graphite. The molar ratio of the silicon and the carbon dioxide is 1:1.5-2. [Reference numerals] (AA) Si lump pulverized waste fine powder; (BB) Impurity removal; (CC) Si fine powder; (DD) Using inexpensive materials such as activated carbon, carbon black, and graphite; (EE) Mixing; (FF) High temperature plasticization; (GG) Heat plasma-based nano conversion; (HH) Nano SiC; (II) Inexpensive nano SiC synthesis |
