| 摘要 |
PURPOSE: A memory device is provided to prevent the area of the memory device from increasing due to a local sense amplifier by arranging the local sense amplifier in the same section as a bit line sense amplifier array. CONSTITUTION: A memory device includes a first cell block(410), a second cell block, a bit line sense amplifier array(430), and a plurality of local sense amplifiers. The second cell block is separated from the first cell block in a first direction. The bit line sense amplifier array is arranged between the first cell block and the second cell block in a second direction which is vertical to a first direction. The plurality of the local sense amplifiers are arranged in both ends of the bit line sense amplifier. |
