发明名称 Control method for device using doped carbon-nanostructure and device comprising doped carbon-nanostructure
摘要 <p>PURPOSE: A method for controlling a device using a doping carbon nano structure and the device including the doping carbon nano structure are provided to improve the efficiency of the device by selectively control the movement of electrons or holes according to doping materials. CONSTITUTION: A device includes a layer in which electrons or holes selectively moves. The device selectively controls the movement of electrons or holes by using an N type or P type doping carbon nano structure. The carbon nano structure has a graphite structure. The device is a solar cell or a thin film transistor.</p>
申请公布号 KR20120120514(A) 申请公布日期 2012.11.02
申请号 KR20110037571 申请日期 2011.04.22
申请人 发明人
分类号 H01L51/50;B82B3/00 主分类号 H01L51/50
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