| 摘要 |
<p>PURPOSE: A semiconductor device and a forming method thereof are provided to improve a property of a semiconductor device by increasing the width of a gate electrode buried in a second trench to reduce a gate resistance. CONSTITUTION: A gate electrode(104) is buried in a trench(102). A sealing insulation layer(106) is formed on the upper side of the gate electrode. A conductive pad(111) is formed on the upper side of the sealing insulation layer. A bit line(114) is connected to the conductive pad. An interlayer insulation layer(112) electrically separates the bit line from a storage electrode contact plug.</p> |
