NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide wide bandgap semiconductor devices including normally-off VJFET integrated power switches.

SOLUTION: The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and heat radiation-resistant electronics components. Methods of making the devices are also described.

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