发明名称 |
INTEGRATED CIRCUIT STRUCTURE INCLUDING COPPER-ALUMINUM INTERCONNECT AND METHOD FOR FABRICATING THE SAME |
摘要 |
An integrated circuit structure including a copper-aluminum interconnect with a CuSiN layer and a method for fabricating the same are provided. The method for fabricating an integrated circuit structure including a copper-aluminum interconnect according to the present invention comprises the steps of providing a copper (Cu) layer; forming a barrier layer including a CuSiN layer on the copper layer; forming a wetting layer on the barrier layer; and forming an aluminum (Al) layer on the wetting layer.
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申请公布号 |
US2012273950(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113095209 |
申请日期 |
2011.04.27 |
申请人 |
SU KUO HUI;CHEN YI NAN;LIU HSIEN WEN;NANYA TECHNOLOGY CORPORATION |
发明人 |
SU KUO HUI;CHEN YI NAN;LIU HSIEN WEN |
分类号 |
H01L23/485;H01L21/283 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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