| 摘要 |
The trench IGBT is provided with a plurality of trench gates disposed in a manner so as to form wide and narrow of gaps; has a MOS structure that has a channel of a first conductivity type and that is between the trench gate pair that is disposed with a narrow gap therebetween; and is provided with a floating semiconductor layer of the first conductivity type and that is separated from the trench gates by interposing a portion of a third semiconductor layer of a second conductivity type between the trench gate pair that is disposed with a wide gap therebetween. Also, this floating semiconductor layer is disposed parallel to and at a position corresponding to an emitter electrode and a first semiconductor layer having the same electric potential, with a insulating film therebetween. |
