METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS
摘要
<p>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.</p>
申请公布号
WO2012106210(A3)
申请公布日期
2012.11.01
申请号
WO2012US22970
申请日期
2012.01.27
申请人
MEMC ELECTRONIC MATERIALS, INC.;GRABBE, ALEXIS;FLANNERY, LAWRENCE P.
