| 摘要 |
<p>This semiconductor device comprises a substrate (1), an epitaxial layer (2) formed on the substrate (1), and a gate electrode (3), source electrode (4), and drain electrode (5) formed on top of the epitaxial layer (2). The source electrode (4) and the drain electrode (5) each have at least two first divided electrodes formed so as to extend parallel to each other in a first direction, the distances (Ps, Pd) between the first divided electrodes being equal to or greater than the radius of an abnormal growth formed on the surface of the epitaxial layer (2), and the widths of both of the first divided electrodes being equal to or greater than the radius of the abnormal growth.</p> |
