PREPARATION METHOD OF NANO MOS DEVICE AND NANO MOS DEVICE

摘要

Disclosed is a preparation method of a Nano MOS device, prepared gates being metal gates, therefore the poly depletion effect is avoided, thereby improving the performance of the MOS device. In the method, a metal film is respectively deposited on surfaces of side walls at two sides of a polycrystalline semiconductor layer, metal in the metal films diffuse to the surfaces of the sides walls of the polycrystalline semiconductor layer, and metal semiconductor compound Nano wires are formed on the surfaces of the side walls of the polycrystalline semiconductor layer after annealing, saving the need of utilizing the high-resolution lithography technology to form the metal semiconductor compound Nano wires, thereby reducing the costs. Further disclosed is a Nano MOS device having gates being metal gates, therefore, the poly depletion effect can be avoided and the performance of the MOS device can be improved.