| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable secure formation of a resist pattern of a desired shape, even under a situation that pattern refinement is in progress. <P>SOLUTION: A resist pattern formation method includes pattern formation steps (S2, S3, S4) for forming an uneven pattern on a resist film and an elimination step (S6) for etching the bottom portion of the concave-shaped portion of the uneven pattern formed by the pattern formation steps (S2, S3, S4). Before the elimination step (S6) after the pattern formation steps (S2, S3, S4), in a region adjacent to an apex including the apex of a convex-shaped portion of the uneven pattern formed by the pattern formation steps (S2, S3, S4), a protection film formation step (S5) is provided for forming a protection film having a shape to suppress a pattern loss of the uneven pattern, caused by the etching in the elimination step (S6), by a chemical deposition process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
