| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method which makes it possible to minimize hole density in a SeOI (Semiconductor-On-Insulator) structure thin layer, and especially, density of a fatal hole which is a fatal defect. <P>SOLUTION: A method for determining a thickness of a part of a donor substrate to be transferred on a support substrate, comprises: a step 20 of selecting a thickness to be transferred; steps 30, 70, 110 for confirming density of a fatal hole in the part transferred for finish sequences 50, 60, 90, 100; and a step of increasing a thickness to be transferred and repeating the step 20 when the confirmed density is larger than the maximum density DM, and repeating the steps 30, 70, 110 for next operation in the finishing sequence until the finish sequences 50, 60, 90, 100 are achieved and the transferred part reaches the final thickness Tf, when the density is smaller than the maximum density DM. <P>COPYRIGHT: (C)2013,JPO&INPIT |
