ULTRA SMALL LED AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to an ultra small LED and a method for manufacturing same, and more specifically, to an ultra small LED comprising: a first conductive semiconductor layer; an active layer which is formed on the first conductive semiconductor layer; and a micro- or nano-sized semiconductor light emitting diode including a second conductive layer that is formed on the active layer, wherein the semiconductor light emitting diode is an ultra small LED comprising a coated insulation film on the outer circumferential surface thereof, and to a method for manufacturing the ultra small LED comprising the following steps: 1) forming on a substrate the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer in order; 2) etching the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer so that the diameter of the LED is a nano or a micro size; and 3) forming the insulation film on the outer circumferential surfaces of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and removing the substrate. According to the present invention, the nano- or micro-sized ultra small LED can be effectively produced by combining a top-down method and a bottom-up method, and the light emitting efficiency can be improved by preventing surface defects on the ultra small LED that is produced.