SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM

摘要

Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film 11) which absorbed water from the atmosphere, and a substrate (wafer W) having a trench 100 formed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film 13) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation film 13a is formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper film 15 is formed on the surface of the second base film by CVD by using a copper organic compound as a material.