MANUFACTURING METHOD FOR GaN SEMICONDUCTOR DEVICE

摘要

A manufacturing method for this GaN semiconductor device (5) includes: a step in which an ion implantation isolation method is used to prepare a composite substrate (1) that contains a support substrate (10) having a thermal expansion coefficient which has a ratio of 0.8-1.2 relative to the thermal expansion coefficient of GaN, and a GaN layer (21), which is bonded to the support substrate (10); a step in which at least a single-layer GaN semiconductor layer (40) is grown on the GaN layer (21) in the composite substrate (1); and a step in which the support substrate (10) in the composite substrate (1) is removed by means of dissolving the same. Thus, a manufacturing method for a GaN semiconductor device is provided which enables GaN semiconductor devices having excellent properties to be manufactured with a good yield.