DMOS TRANSISTOR WITH CAVITY BELOW DRIFT REGION,申请号WO2012US35249-传众专利搜索

发明名称	DMOS TRANSISTOR WITH CAVITY BELOW DRIFT REGION
摘要	<p>A lateral DMOS transistor (300) formed on a silicon-on-insulator (SOI) structure (102) has a higher breakdown voltage that results from a cavity (310) that is formed in the bulk region (104) of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer (106) of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.</p>
申请公布号	WO2012149184(A2)	申请公布日期	2012.11.01
申请号	WO2012US35249	申请日期	2012.04.26
申请人	TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED;FRENCH, WILLIAM;VASHCHENKO, VLADISLAV;FOOTE, RICHARD, WENDELL;SADOVNIKOV, ALEXEI;BHOLA, PUNIT;HOPPER, PETER, J.	发明人	FRENCH, WILLIAM;VASHCHENKO, VLADISLAV;FOOTE, RICHARD, WENDELL;SADOVNIKOV, ALEXEI;BHOLA, PUNIT;HOPPER, PETER, J.
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
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