| 摘要 |
<P>PROBLEM TO BE SOLVED: To acquire favorable phase difference information without reducing an opening of a light-shielding film of a phase difference detecting pixel. <P>SOLUTION: A solid-state image sensor includes: a plurality of photoelectric transducers 5 which are alignedly formed into a two-dimensional array on a substrate and each of which generates a signal charge according to an incident light quantity; microlenses having same shape thereto and superposed on each of the plurality of photoelectric transducers 5; and light-shielding films interposed between the light receiving surfaces of the photoelectric transducers 5 and the corresponding microlenses and provided with openings 6 on the light receiving surfaces of the photoelectric transducers 5. An opening provided on two adjoining photoelectric transducers 5G and 5g, out of the photoelectric transducers 5, for detecting phase difference information of incident light from a subject is provided as a single opening 7 in common with the two photoelectric transducers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
