发明名称 MASK BLANK AND MANUFACTURING METHOD OF PHASE SHIFT MASK
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask blank suited for manufacturing substrate digging type phase shift masks, including a light-shielding film pattern of a tantalum-based material. <P>SOLUTION: A mask blank 100 used for manufacturing substrate digging type phase shift masks has a configuration in which a light shielding film 8, and an etching mask film 5 are sequentially superposed on a translucent substrate 1. The light shielding film 8 is formed in contact with a translucent substrate 1, and comprises a material consisting primarily of tantalum and substantially including no oxygen. The etching mask film 5 comprises a material having the content of chromium of 45 at% or more and the content of oxygen of 30 at% or less. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012212013(A) 申请公布日期 2012.11.01
申请号 JP20110077489 申请日期 2011.03.31
申请人 HOYA CORP 发明人 USHIDA MASAO;OKUBO AKIRA;OKUBO YASUSHI;NOZAWA JUN
分类号 G03F1/54 主分类号 G03F1/54
代理机构 代理人
主权项
地址