| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an enclosing gate electrode and a strained-SOI MISFET with a hole. <P>SOLUTION: A MISFET comprises: a first insulation film 2 provided on a semiconductor substrate 1; a second insulation film 3 selectively provided on the first insulation film 2; a pair of first semiconductor layers 6 selectively provided on the second insulation film 3; a pair of second semiconductor layers 8 provided on a hole 5 with respective one lateral faces contacting the first semiconductor layers 6, respectively; and a third strained-semiconductor layer 7 with two lateral faces contacting between the second semiconductor layers 8 with a remaining periphery enclosed by a gate electrode 15 via a gate insulation film 14. In the first and the second semiconductor layers (6, 8), source-drain regions (10, 11, 12, 13) are roughly provided. In the third semiconductor layer 7, a channel region is roughly provided. To the source-drain regions (10, 13) and the enclosing gate electrode 15, wiring bodies (19, 20, 22, 23) are connected. <P>COPYRIGHT: (C)2013,JPO&INPIT |
