| 摘要 |
A semiconductor memory device includes a random address generation unit configured to receive a multi-bit source address and generate a multi-bit random address and a signal mixing unit configured to mix the multi-bit random address with a data, wherein the random address generation unit has a plurality of transmission lines configured to electrically connect the plurality of input terminals respectively corresponding to bits of the source address and the plurality of output terminals respectively corresponding to bits of the random address in one-to-one correspondence regardless of an order of the bits of the source address.
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