发明名称 |
Topological Insulator-Based Field-Effect Transistor |
摘要 |
A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.
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申请公布号 |
US2012273763(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113097405 |
申请日期 |
2011.04.29 |
申请人 |
BANERJEE SANJAY K.;REGISTER, II LEONARD FRANKLIN;MACDONALD ALLAN;SAHU BHAGAWAN R.;JADAUN PRIYAMVADA;CHANG JIWON |
发明人 |
BANERJEE SANJAY K.;REGISTER, II LEONARD FRANKLIN;MACDONALD ALLAN;SAHU BHAGAWAN R.;JADAUN PRIYAMVADA;CHANG JIWON |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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地址 |
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