发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
To provide a photoelectric conversion device with less metal contamination and surface detects, and a manufacturing method thereof. The photoelectric conversion device is formed in the following manner: a surface of the single crystal silicon substrate is soaked in an alkaline solution to perform etching so that unevenness including a plurality of minute projections each having a substantially square pyramidal shape and a depression formed between the adjacent projections are formed; then, the single crystal silicon substrate having the unevenness is soaked in a mixed acid solution to perform etching so that at a cross section including a vertex of the projection and dividing each of a surface of the projection and a surface facing the aforementioned surface into two equal parts, the vertex of the projection forms an obtuse angle, and a bottom of the depression has a curved surface.
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申请公布号 |
US2012273036(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201213448551 |
申请日期 |
2012.04.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MOTOYOSHI RYOSUKE;HIROSE TAKASHI;KUSUMOTO NAOTO |
分类号 |
H01L31/0264;H01L31/036;H01L31/0376;H01L31/18 |
主分类号 |
H01L31/0264 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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