发明名称 |
METHOD FOR PRODUCING SILICON LAYERS |
摘要 |
The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ≦̸5 minutes. The invention also relates to silicon layers producible according to said method and to their use. |
申请公布号 |
US2012273805(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201013510373 |
申请日期 |
2010.11.10 |
申请人 |
EVONIK DEGUSSA GMBH |
发明人 |
WIEBER STEPHAN;PATZ MATTHIAS;CARIUS REINHARD;BRONGER TORSTEN;COELLE MICHAEL |
分类号 |
H01L21/20;H01L29/12;H01L31/0248;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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