| 摘要 |
The semiconductor device includes transistors which are stacked. The transistors include a semiconductor substrate having a groove portion and a pair of low-resistance regions between which the groove portion is provided, a first gate insulating film over the semiconductor substrate, a gate electrode overlapping with the groove portion with the first gate insulating film interposed therebetween, a second gate insulating film covering the gate electrode, a pair of electrodes provided over the second gate insulating film so that the groove portion is sandwiched between the pair of electrodes, and a semiconductor film in contact with the pair of electrodes. One of the pair of low-resistance region is electrically connected to one of the pair of electrodes. One of the transistors includes an n-type semiconductor and the other includes a p-type semiconductor, so that a complementary MOS circuit is formed. |
