| 摘要 |
<p>Disclosed is a semiconductor device with which ESD discharge capability can be improved without increasing the number of special steps or special masks as ESD countermeasures. A high withstand-voltage ESD protective element (21) comprising an HV transistor (23) of MOSFET structure and a protective resistance circuit (25), and a low withstand-voltage ESD protective element (22) comprising an LV transistor (24) of MOSFET structure and a protective resistance circuit (26), are formed in prescribed regions on a substrate. In the protective resistance circuit (25 (26)), resistance drift regions (16 (17)) are separately formed on the surface layer of a well (2 (3)) in a mutually opposed manner on either side of a gate electrode (8b (8d)), and both of the resistance drift regions (16 (17)) have the same structure as the HV transistor (23) (LV transistor (24)) apart from being electrically connected by low-concentration drift regions (5c (5d)) of the same conductivity type.</p> |
