SOLID-STATE IMAGING DEVICE, AND CAMERA SYSTEM USING SAME

摘要

This solid-state imaging device is provided with a semiconductor substrate (31), a plurality of pixels (11), and a row signal line (141). Each of the pixels (11) has an amplification transistor (113), a selection transistor (115), a reset transistor (117), and a photoelectric converter (111). The photoelectric converter (111) has a photoelectric conversion film (45), a transparent electrode (47), a pixel electrode (46), and a storage diode. The pixel electrode (46) and the storage diode are connected to the gate of the amplification transistor (113). The source of the amplification transistor (113) is connected to the row signal line (141), and the drain is connected to a power source line. The source of the reset transistor (117) is connected to the pixel electrode (46). The selection transistor (115) is inserted between the source of the amplification transistor (113) and the row signal line (141). The threshold voltage of the amplification transistor (113) is less than the voltage of the storage diode.