发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus which can increase the rate of particle removal even if the contact angle of the front surface of a substrate is small. <P>SOLUTION: A substrate W is held on a spin chuck 2 in a substantially horizontal position while directing the front surface Wf upward. The front surface Wf of the substrate W is then subjected to hydrophobing by supplying a hydrophobic agent thereto from a hydrophobic agent discharge nozzle 5. Subsequently, a process liquid is supplied to the front surface Wf of the substrate W from a process liquid discharge nozzle 97, and a liquid membrane of process liquid is formed. Thereafter, cooling gas is discharged to the front surface Wf of the substrate W from a cooling gas discharge nozzle 3, and the liquid membrane is frozen. Finally, a melting liquid is discharged to the front surface Wf of the substrate W from a melting liquid discharge nozzle 6, and the frozen membrane is melted and removed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012212758(A) 申请公布日期 2012.11.01
申请号 JP20110077148 申请日期 2011.03.31
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 SUGIMOTO KENJI;MIYA KATSUHIKO
分类号 H01L21/304 主分类号 H01L21/304
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