| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding method at low temperature or room temperature which includes cleaning and activation of a surface by cleaning or etching. <P>SOLUTION: The method includes a step for removing byproducts of interface polymerization in order to prevent reversible reaction so that room temperature chemical bonding of silicon, silicon oxides and such a material as SiO is carried out. The surface to be bonded is polished to have appropriate smoothness and planarity (2). In the VSE, reactive ion etching or wet etching is used in order to etch the surface to be bonded slightly (3). Surface roughness and planarity do not decrease but are increased by the VSE process. The etching surface is rinsed with a solution of ammonium hydroxide or ammonium fluoride, so as to accelerate formation of a desired bonding chemical species on the surface (4). <P>COPYRIGHT: (C)2013,JPO&INPIT |
