发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING SYSTEM, AND ADJUSTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, a manufacturing system, and an adjusting device capable of improving a product yield. <P>SOLUTION: A manufacturing method of a semiconductor device of an embodiment includes a deposition step, a processing step, an ion implantation step, an annealing step, and an adjustment step. The deposition step deposits a semiconductor thin film on a substrate. The processing step processes the thin film into a prescribed shape. The ion implantation step implants ions into the thin film processed into the prescribed shape. The annealing step anneals the thin film in which the ions were implanted to generate a resistance element. The adjustment step adjusts both or either of ion implantation processing conditions of the ion implantation step and annealing processing conditions of the annealing step based on at least one of the thin film deposition conditions and the result of the deposition step, and the thin film processing result of the processing step. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012212847(A) 申请公布日期 2012.11.01
申请号 JP20110233316 申请日期 2011.10.24
申请人 TOSHIBA CORP 发明人 KUBO TAKASHI
分类号 H01L21/02;C23C14/48;C23C16/52;H01L21/205;H01L21/306;H01L21/3065;H01L21/31;H01L21/822;H01L27/04 主分类号 H01L21/02
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