| 摘要 |
A fuse circuit of a semiconductor device includes a transfer unit configured to selectively transfer a corresponding address signal in response to a first test mode signal, a fuse control unit configured to drive an output end with a first voltage in response to an output signal of the transfer unit, a fuse unit including a MOS transistor having a gate coupled to the output end, and a fuse enable unit configured to selectively supply a second voltage to a source/drain of the MOS transistor of the fuse unit in response to the first test mode signal, wherein the fuse circuit is programmed by causing a breakdown of the MOS transistor in response to a voltage difference between the first voltage and the second voltage that are applied to the gate and the source/drain of the MOS transistor of the fuse unit.
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