| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce power consumption and increase an operation speed by sufficiently reducing the size of a transistor. CONSTITUTION: An insulation layer(130) is formed on a substrate. A semiconductor layer(144) is formed on the insulation layer. A gate insulation layer(146) is formed on the semiconductor layer. A gate electrode(148) is formed on the gate insulation layer. A source electrode(142a) and a drain electrode(142b) are electrically connected to the semiconductor layer.</p> |
