| 摘要 |
<p>PURPOSE: A MOS semiconductor device and a manufacturing method thereof are provided to obtain a leakage current between bands and a low junction capacitance. CONSTITUTION: An insulation layer(70) is formed on the surface(62) of a semiconductor substrate(60). A dummy gate is formed on the insulation layer. A sidewall spacer(78) is formed on the edges of the dummy gate. A gap-fill material(82) is deposited on the semiconductor substrate and the dummy gate. A part of the gap material is removed to expose the uppermost surface of the dummy gate. The dummy gate is removed to form an extended recess using the gap-fill material.</p> |
