| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer which can maximize the device region by reducing the outer peripheral excess region forming a crystal orientation recognition mark, and is optimal for a reflection type mark recognition method. <P>SOLUTION: In the manufacturing method of a semiconductor wafer having an outer peripheral excess region 5 around a device region 4, a flat surface of a predetermined width extending, in a belt, in the axial direction of a columnar ingot composed of a semiconductor material is formed at a predetermined position on the peripheral surface of the ingot corresponding to the crystal orientation of the semiconductor material. Subsequently, the ingot is sliced, and a flat surface orthogonal to the surface direction of the semiconductor wafer 1 is formed as a mark 8 indicating the crystal orientation at the outer peripheral end of the outer peripheral excess region 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
