发明名称 |
Colloidal Silicon Quantum Dot Visible Spectrum Light-Emitting Diode |
摘要 |
A method is provided for fabricating a colloidal silicon quantum dot (SiQD) visible spectrum light-emitting diode (LED). The method begins with a transparent first electrode, and a hole-injection layer is formed overlying the first electrode. A hole-transport layer is formed overlying the hole-injection layer, and a SiQD layer overlies the hole-transport layer, where each SiQD has a diameter of less than about 6 nanometers (nm). An electron-transport layer is formed overlying the SiQD layer, and a second electrode is formed overlying the electron-transport layer.
|
申请公布号 |
US2012274231(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113094262 |
申请日期 |
2011.04.26 |
申请人 |
TU CHANG-CHING;TANG LIANG;HUANG JIANDONG;VOUTSAS APOSTOLOS T. |
发明人 |
TU CHANG-CHING;TANG LIANG;HUANG JIANDONG;VOUTSAS APOSTOLOS T. |
分类号 |
H05B37/02;H01L51/54;H01L51/56 |
主分类号 |
H05B37/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|