发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region. |
申请公布号 |
US2012276690(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201213549540 |
申请日期 |
2012.07.16 |
申请人 |
SEKIGUCHI KEIICHI;KOEZUKA JUNICHI;ARAI YASUYUKI;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SEKIGUCHI KEIICHI;KOEZUKA JUNICHI;ARAI YASUYUKI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/336;H01L21/50;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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