发明名称 |
METHOD FOR MAKING LIGHT EMITTING DIODE |
摘要 |
A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer. |
申请公布号 |
US2012276670(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113288174 |
申请日期 |
2011.11.03 |
申请人 |
WEI YANG;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY |
发明人 |
WEI YANG;FAN SHOU-SHAN |
分类号 |
H01L33/06;B82Y40/00;H01L33/20 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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