PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of highly accurately etching a film structure having a step, or a dry etching method.

SOLUTION: A plasma processing device comprises: a vacuum container 107; a lower electrode 113 which is disposed in a processing chamber inside the vacuum container and in which a wafer 112 to be etched is placed on the upper surface; bias application devices 118 and 120 which supply high-frequency power for forming a bias potential to the lower electrode 113; gas introduction means 111 for introducing a reactive gas into the processing chamber; electric field supply means 101 to 103 for supplying electric field for generating plasma into the processing chamber; and an adjustment device 127 which adjusts ion energy distribution in the plasma which enters the wafer 112 with the high-frequency power.

COPYRIGHT: (C)2013,JPO&INPIT