发明名称 |
METHOD FOR PATTERNING AN EPITAXIAL SUBSTRATE, A LIGHT EMITTING DIODE AND A METHOD FOR FORMING A LIGHT EMITTING DIODE |
摘要 |
A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
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申请公布号 |
US2012273821(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201213450424 |
申请日期 |
2012.04.18 |
申请人 |
WEI CHENG-HUNG;LIN BO-WEN;PENG CHING-YEN;KUO HAO-CHUNG;HSU WEN-CHING;SINO-AMERICAN SILICON PRODCUTS INC. |
发明人 |
WEI CHENG-HUNG;LIN BO-WEN;PENG CHING-YEN;KUO HAO-CHUNG;HSU WEN-CHING |
分类号 |
H01L33/22;H01L21/311;H01L33/00 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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