发明名称 METHOD FOR PATTERNING AN EPITAXIAL SUBSTRATE, A LIGHT EMITTING DIODE AND A METHOD FOR FORMING A LIGHT EMITTING DIODE
摘要 A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
申请公布号 US2012273821(A1) 申请公布日期 2012.11.01
申请号 US201213450424 申请日期 2012.04.18
申请人 WEI CHENG-HUNG;LIN BO-WEN;PENG CHING-YEN;KUO HAO-CHUNG;HSU WEN-CHING;SINO-AMERICAN SILICON PRODCUTS INC. 发明人 WEI CHENG-HUNG;LIN BO-WEN;PENG CHING-YEN;KUO HAO-CHUNG;HSU WEN-CHING
分类号 H01L33/22;H01L21/311;H01L33/00 主分类号 H01L33/22
代理机构 代理人
主权项
地址