| 摘要 |
PURPOSE: A pattern forming method is provided to improve the resolution of microtrench patterns or hole patterns and to improve dry-etching resistance characteristic. CONSTITUTION: A pattern forming method includes the following steps: a resist composition is coated on a substrate; the composition is heated by a post-applied baking operation to form a resist film on the substrate; the resist film is exposed to high energy beam; the exposed film is heated by a post-exposure baking operation; the non-exposed part of the resist film is selectively dissolved using a developing solution including an organic solvent. The resist composition includes a ring-opening metathesis polymer hydrogen additive, an acid generator, and an organic solvent. The ring-opening metathesis polymer hydrogen additive includes one or more first repeating units represented by chemical formula 1 and one or more second repeating units represented by chemical formula 3 or 4. |
